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Freescale Semiconductor Technical Data
Document Number: MRF6V2300N Rev. 2, 5/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed primarily for CW large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. * Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts Power Gain -- 25.5 dB Drain Efficiency -- 68% * Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 300 Watts CW Output Power Features * Integrated ESD Protection * Excellent Thermal Stability * Facilitates Manual Gain Control, ALC and Modulation Techniques * 200C Capable Plastic Package * RoHS Compliant * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF6V2300NR1 MRF6V2300NBR1
10 - 450 MHz, 300 W, 50 V LATERAL N - CHANNEL SINGLE - ENDED BROADBAND RF POWER MOSFETs
CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6V2300NR1
CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6V2300NBR1 PARTS ARE SINGLE - ENDED
RFin/VGS
RFout/VDS
RFin/VGS
RFout/VDS
(Top View) Note: Exposed backside of the package is the source terminal for the transistor.
Figure 1. Pin Connections Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ Value - 0.5, +110 - 0.5, +10 - 65 to +150 200 Unit Vdc Vdc C C
(c) Freescale Semiconductor, Inc., 2007. All rights reserved.
MRF6V2300NR1 MRF6V2300NBR1 1
RF Device Data Freescale Semiconductor
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 83C, 300 W CW Symbol RJC Value (1,2) 0.24 Unit C/W
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 2 (Minimum) A (Minimum) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) Drain - Source Breakdown Voltage (ID = 150 mA, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 800 Adc) Gate Quiescent Voltage (VDD = 50 Vdc, ID = 900 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics Reverse Transfer Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss Coss Ciss -- -- -- 2.88 120 268 -- -- -- pF pF pF VGS(th) VGS(Q) VDS(on) 1 1.5 -- 1.63 2.6 0.28 3 3.5 -- Vdc Vdc Vdc IDSS IDSS V(BR)DSS IGSS -- -- 110 -- -- -- -- -- 2.5 50 -- 10 mA Adc Vdc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 900 mA, Pout = 300 W, f = 220 MHz, CW Power Gain Gps 24 25.5 27 Drain Efficiency Input Return Loss D IRL 66 -- 68 - 16 -- -9
dB % dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. ATTENTION: The MRF6V2300N and MRF6V2300NB are high power devices and special considerations must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263 (for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to ensure proper mounting of these devices.
MRF6V2300NR1 MRF6V2300NBR1 2 RF Device Data Freescale Semiconductor
B3 B1 VBIAS + C1 + C2 + C3 C4 C5 C6 C7 R1 B2 L2 C17 C18 C19 + C20 VSUPPLY
L1 C8 RF INPUT C9 C10 C11 R2 Z3 Z4 Z5 R3 Z6
C14
C15
C16 RF OUTPUT
Z7
Z8
Z9
Z10 C23 C21 C22
Z11
Z1 C12
Z2
C13
DUT
Z1 Z2 Z3 Z4 Z5 Z6, Z7
0.352 1.567 0.857 0.276 0.434 0.298
x 0.082 x 0.082 x 0.082 x 0.220 x 0.220 x 0.630
Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip
Z8 Z9 Z10 Z11 PCB
0.085 x 0.170 Microstrip 2.275 x 0.170 Microstrip 0.945 x 0.170 Microstrip 0.443 x 0.082 Microstrip Arlon GX - 0300 - 55 - 22, 0.030, r = 2.55
Figure 2. MRF6V2300NR1(NBR1) Test Circuit Schematic
Table 6. MRF6V2300NR1(NBR1) Test Circuit Component Designations and Values
Part B1, B2 B3 C1 C2 C3 C4, C19 C5, C18 C6, C11, C17 C7, C8, C15, C16 C10 C9, C12, C14, C23 C13 C20 C21 C22 L1 L2 R1 R2, R3 Description 95 , 100 MHz Long Ferrite Beads, Surface Mount 47 , 100 MHz Short Ferrite Bead, Surface Mount 47 F, 50 V Electrolytic Capacitor 22 F, 35 V Tantalum Capacitor 10 F, 35 V Tantalum Capacitor 10 K pF Chip Capacitors 20 K pF Chip Capacitors 0.1 F, 50 V Chip Capacitors 2.2 F, 50 V Chip Capacitors 220 nF Chip Capacitor 1000 pF Chip Capacitors 82 pF Chip Capacitor 470 F, 63 V Electrolytic Capacitor 24 pF Chip Capacitor 39 pF Chip Capacitor 4 Turn #18 AWG, 0.18" ID 82 nH Inductor 270 , 1/4 W Chip Resistor 4.75 , 1/4 W Chip Resistors Part Number 2743021447 2743019447 476KXM063M T494X226K035AT T491D106K035AT ATC200B103KT50XT ATC200B203KT50XT CDR33BX104AKYS C1825C225J5RAC C1206C224Z5VAC ATC100B102JT50XT ATC100B820JT500XT 477KXM063M ATC100B240JT500XT ATC100B390JT500XT None 1812SMS - 82NJ CRCW12062700FKTA CRCW12064R75FKTA Manufacturer Fair - Rite Fair - Rite Illinois Capacitor Kemet Kemet ATC ATC AVX Kemet Kemet ATC ATC Illinois Capacitor ATC ATC None Coilcraft Vishay Vishay
MRF6V2300NR1 MRF6V2300NBR1 RF Device Data Freescale Semiconductor 3
C1
C2
C3
+
B1 C4 C5 C6 R1 C10 C11 C9 B2 C8 C15* C16* L2 C19 C18 C17 B3
+
C20
C7
C12 R2 R3
C14 L1 C23 CUT OUT AREA
C13
C22 C21
MRF6V2300N/NB Rev. 3
* Stacked
Figure 3. MRF6V2300NR1(NBR1) Test Circuit Component Layout
MRF6V2300NR1 MRF6V2300NBR1 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
1000 Ciss Coss Measured with 30 mV(rms)ac @ 1 MHz VGS = 0 Vdc 10 Crss ID, DRAIN CURRENT (AMPS) C, CAPACITANCE (pF) 100
100
10
TC = 25C 1 0 10 20 30 40 50 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 1 1 10 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 100
Figure 4. Capacitance versus Drain - Source Voltage
10 9 ID, DRAIN CURRENT (AMPS) 8 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 DRAIN VOLTAGE (VOLTS) 2.25 V 22 10 2.63 V 2.5 V 2.75 V Gps, POWER GAIN (dB) VGS = 3 V 28 27
Figure 5. DC Safe Operating Area
IDQ = 1350 mA 1125 mA
26 25
900 mA 650 mA
24 23
450 mA VDD = 50 Vdc f1 = 220 MHz 100 Pout, OUTPUT POWER (WATTS) CW 600
Figure 6. DC Drain Current versus Drain Voltage
-15 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 60
Figure 7. CW Power Gain versus Output Power
VDD = 50 Vdc, f1 = 220 MHz, f2 = 220.1 MHz -20 Two -Tone Measurements, 100 kHz Tone Spacing Pout, OUTPUT POWER (dBm) 58
P3dB = 55.76 dBm (377 W)
Ideal
-25 -30 -35 650 mA -40 -45 -50 1350 mA -55 1 10 100 600 Pout, OUTPUT POWER (WATTS) PEP 1125 mA IDQ = 450 mA 900 mA
P1dB = 55.04 dBm (319 W) 56 Actual 54
52 50 24
VDD = 50 Vdc, IDQ = 900 mA f = 220 MHz 26 28 30 32 34
Pin, INPUT POWER (dBm)
Figure 8. Third Order Intermodulation Distortion versus Output Power
Figure 9. CW Output Power versus Input Power
MRF6V2300NR1 MRF6V2300NBR1 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
28 26 Pout, OUTPUT POWER (dBm) 55 Gps, POWER GAIN (dB) 24 22 20 18 25 V 16 VDD = 20 V 14 0 50 100 150 200 250 300 350 400 Pout, OUTPUT POWER (WATTS) CW 30 V IDQ = 900 mA f = 220 MHz 40 V 35 V 50 V 45 V 25_C 60 TC = -30_C 85_C
50
45 VDD = 50 Vdc IDQ = 900 mA f = 220 MHz 15 20 25 30 35
40 35 10
Pin, INPUT POWER (dBm)
Figure 10. Power Gain versus Output Power
29
Figure 11. Power Output versus Power Input
80 25_C 85_C Gps -30_C 70 60 50 D, DRAIN EFFICIENCY (%) D, DRAIN EFFICIENCY (%)
28 Gps, POWER GAIN (dB) 27 TC = -30_C 26 25 24 23 22 5 10 D 25_C 85_C
40 30 VDD = 50 Vdc IDQ = 900 mA f = 220 MHz 100 20 10 600
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain and Drain Efficiency versus CW Output Power
25 24 23 Gps, POWER GAIN (dB) 22 21 20 19 18 17 16 15 160 VDD = 50 V, Pout = 300 W (Peak) IDQ = 1100 mA, Tone -Spacing = 100 kHz 170 180 190 200 210 220 230 IMD3 Gps D 65 60 55 50 45 40 35 30 25 20 15 240
-28 -29 -30 -31 -32 -33 IMD3 (dBc)
f, FREQUENCY (MHz)
Figure 13. VHF Broadcast Broadband Performance
MRF6V2300NR1 MRF6V2300NBR1 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
108
MTTF (HOURS)
107
106
105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 300 W CW, and D = 68%. MTTF calculator available at http:/www.freescale.com/rf. Select Tools/ Software/Application Software/Calculators to access the MTTF calcu- lators by product.
Figure 14. MTTF versus Junction Temperature
MRF6V2300NR1 MRF6V2300NBR1 RF Device Data Freescale Semiconductor 7
Zsource f = 220 MHz
Zo = 5
Zload
f = 220 MHz
VDD = 50 Vdc, IDQ = 900 mA, Pout = 300 W CW f MHz 220 Zsource W 1.23 + j3.69 Zload W 2.43 + j2.04
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRF6V2300NR1 MRF6V2300NBR1 8 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
B E1 E3
2X
A
GATE LEAD
DRAIN LEAD
D1
4X
D e
b1 aaa M C A
4X
D2 c1 H
DATUM PLANE ZONE J
2X
2X
E
F
A1 A2 E2 E5 E4
2X
A
NOTE 7
C
SEATING PLANE
PIN 5
NOTE 8
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETER- MINED AT DATUM PLANE -H-. 5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE "b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. 7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY. 8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. INCHES MIN MAX .100 .104 .039 .043 .040 .042 .712 .720 .688 .692 .011 .019 .600 --- .551 .559 .353 .357 .132 .140 .124 .132 .270 --- .346 .350 .025 BSC .164 .170 .007 .011 .106 BSC .004 DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 18.08 18.29 17.48 17.58 0.28 0.48 15.24 --- 14 14.2 8.97 9.07 3.35 3.56 3.15 3.35 6.86 --- 8.79 8.89 0.64 BSC 4.17 4.32 0.18 0.28 2.69 BSC 0.10
4
D3
3
RF Device Data Freescale Semiconductor
CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC
E5 BOTTOM VIEW
1
2
DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 e aaa
CASE 1486 - 03 ISSUE C TO - 270 WB - 4 PLASTIC MRF6V2300NR1
STYLE 1: PIN 1. 2. 3. 4. 5.
MRF6V2300NR1 MRF6V2300NBR1 9
MRF6V2300NR1 MRF6V2300NBR1 10 RF Device Data Freescale Semiconductor
MRF6V2300NR1 MRF6V2300NBR1 RF Device Data Freescale Semiconductor 11
MRF6V2300NR1 MRF6V2300NBR1 12 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages * AN1955: Thermal Measurement Methodology of RF Power Amplifiers * AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 1 Date Feb. 2007 Feb. 2007 * Initial Release of Data Sheet * Added Fig. 1, Pin Connections, p. 1 * Removed footnote references listed for Operating Junction Temperature, Table 1, Maximum Ratings, p. 1 * Added Max value to Power Gain, Table 5, Functional Tests, p. 2 2 May 2007 * Corrected Test Circuit Component part numbers in Table 6, Component Designations and Values for C4, C19, C5, C18, C9, C12, C14, and C23, p. 3 Description
MRF6V2300NR1 MRF6V2300NBR1 RF Device Data Freescale Semiconductor 13
How to Reach Us:
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MRF6V2300NR1 MRF6V2300NBR1
Rev. 14 2, 5/2007 Document Number: MRF6V2300N
RF Device Data Freescale Semiconductor

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